The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Content:
Chapter 1 Introduction (pages 1?3):
Chapter 2 Structural Properties (pages 4?16):
Chapter 3 Mechanical, Elastic, and Lattice Vibrational Properties (pages 17?47):
Chapter 4 Thermal Properties (pages 48?62):
Chapter 5 Collective Effects and Some Response Characteristics (pages 63?74):
Chapter 6 Electronic Energy?Band Structure (pages 75?117):
Chapter 7 Electron and Hole Deformation Potentials (pages 118?134):
Chapter 8 Optical Properties (pages 135?192):
Chapter 9 Elastooptic and Electrooptic Effect (pages 193?222):
Chapter 10 Carrier Transport Properties (pages 223?262):
Chapter 11 Strain Problems in InGaAs(P)?Based Heterostructures (pages 263?286):
Chapter 12 Concluding Remarks (pages 287?288):
Physical
{pdf} Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Sadao Adachi(auth.)
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